BFR 35AP E6327 数据手册
其他文档
未找到其他文档！
技术规格
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: Infineon Technologies BFR 35AP E6327
- Transistor Type: NPN
- Collector Current (Ic): 45mA
- Power Dissipation (Pd): 280mW
- Transition Frequency (fT): 5GHz
- DC Current Gain (hFE@Ic,Vce): 70@15mA,8V
- Collector Cut-Off Current (Icbo): -
- Collector-Emitter Breakdown Voltage (Vceo): 15V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): -
- Package: SOT-23(TO-236)
- Manufacturer: Infineon Technologies
